NOTE: This document was generated from the 1995-1997 UIUC Programs of Study. Every effort has been made to ensure accuracy, but be advised that requirements may have changed since this book was published. Errors may have also been introduced in the conversion to a WWW document. Thus for items of importance, it might be wise to seek confirmation from either the paper version or a live human being.
The 50,000 square foot building houses facilities and equipment for optoelectronic materials' growth, submicron device patterning and fabrication, high-speed optical and electrical measurements, and ultra-high-purity semiconductor characterization. Among the highlights of this building are its sixteen class 100 and class 1000 clean room laboratories for crystal growth and device processing and fabrication. Specific capabilities include molecular beam epitaxy (MBE), metal-organic chemical vapor (MOCVD), chemical beam epitaxy (CBE), electron and optical lithography, plasma-assisted deposition of oxides and nitrides, reactive ion etching, and plasma etching.
The building also houses the Center for Compound Semiconductor Microelectronics--one of twenty-one National Science Foundation Engineering Research Centers nationwide. The CCSM has three goals: develop the engineering science and technology base required to fabricate low-cost, high-performance optoelectronic integrated circuits and apply them in optical interconnect systems; educate engineers in this field; and transfer this technology to industry. Eight of the CCSM's nineteen research groups reside in the building.
Funded by the state of Illinois, the $13.5 million building was the first university facility in the world to be built in accordance with the stringent H6 fire and safety codes applicable to semiconductor laboratories.
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